features z high voltage: v ceo =-60v z high transistors frequency maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -80 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current -1 a p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-0.1ma,i e =0 -80 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e =-0.1ma,i c =0 -5 v collector cut-off current i cbo v cb =-50v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.1 a h fe1 v ce =-2v,i c =-50ma 60 200 dc current gain h fe2 v ce =-2v,i c =-1a 30 collector-emitter saturation voltage v ce(sat) i c =-500ma,i b =-50ma -0.7 v base-emitter saturation voltage v b e(sat) i c =-500ma,i b =-50ma -1.2 v transition frequency f t v ce =-10v,i c =-50ma, f=100mhz 150 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 12 pf classification of h fe rank o y range 60-120 100-200 marking jo jy sot-89 1. base 2. collector 3. emitter 1 2 3 KTA1668 transistor (pnp) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics KTA1668 2 date:2011/05 www.htsemi.com semiconductor jinyu
KTA1668 3 date:2011/05 www.htsemi.com semiconductor jinyu
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